 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200214 Issued Date : 2002.09.01 Revised Date : 2004.11.08 Page No. : 1/5 HLB125HE NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB125HE is designed for lighting applications and low switch-mode power supplies. And it is high voltage capability and high switching speeds. TO-220 Features * High Speed Switching * Low Saturation Voltage * High Reliability Absolute Maximum Ratings (TA=25C) * Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 C Junction Temperature ..................................................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TC=25C) .................................................................................................................... 75 W * Maximum Voltages and Currents (TA=25C) VCEX Collector to Emitter Voltage ...................................................................................................................... 700 V VCEO Collector to Emitter Voltage ...................................................................................................................... 400 V VEBO Emitter to Base Voltage ................................................................................................................................ 9 V IC Collector Current (Continuous) .......................................................................................................................... 4 A IB Base Current (Continuous) ................................................................................................................................ 2 A Electrical Characteristics (TA=25C) Symbol BVCEX BVCEO IEBO ICEX *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat) *VBE(sat) *hFE Min. 700 400 15 Typ. Max. 1 1 500 0.6 1 1.2 1.6 25 Unit V V mA mA mV V V V V IC=10mA VEB=9V VCE=700V, VBE(off)=1.5V IC=1A, IB=200mA IC=2A, IB=500mA IC=4A, IB=1A IC=1A, IB=200mA IC=2A, IB=500mA IC=2A, VCE=5V *Pulse Test: Pulse Width 380us, Duty Cycle2% Test Conditions IC=1mA, VBE(off)=1.5V HLB125HE HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100 Spec. No. : HE200214 Issued Date : 2002.09.01 Revised Date : 2004.11.08 Page No. : 2/5 Saturation Voltage & Collector Current 10000 125 C o 75 C o VCE(sat) @ IC=5IB Saturation Voltage (mV) 1000 75 C o 25 C o hFE 10 hFE @ VCE=5V 100 125 C o 25 C o 1 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 10000 Saturation Voltage & Collector Current VCE(sat) @ IC=4IB VBE(sat) @ IC=5IB Saturation Voltage (mV) 75 C 100 125 C 25 C o o o Saturation Voltage (mV) 75 C 1000 25 C o o 125 C o 10 100 1 10 100 1000 Collector Current-IC (mA) 10000 10 100 1000 10000 Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VBE(sat) @ IC=4IB 1000 Capacitance & Reverse-Biased Voltage Saturation Voltage (mV) Capacitance (pF) 100 75 C 1000 25 C o o Cob 10 125 C o 100 10 100 1000 10000 1 0.1 1 10 100 Collector Current-IC (mA) Reverse-Biased (V) HLB125HE HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200214 Issued Date : 2002.09.01 Revised Date : 2004.11.08 Page No. : 3/5 Switching time vs Collector Current 10.0 Vcc=125V, IC=2A, IB1=IB2=0.4A 10 Safe Operating Area Tstg PT=10uS Collector Current-IC (A) Switching Time(us).. . 1 PT=1s 1.0 Ton 0.1 PT=1ms PT=100ms Toff 0.1 0.1 1 10 0.01 1 10 100 1000 10000 Collector Current(A) Forward Voltage-VCE (V) HLB125HE HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking: A D B E C F Pb Free Mark Pb-Free: " . " (Note) Normal: None H Spec. No. : HE200214 Issued Date : 2002.09.01 Revised Date : 2004.11.08 Page No. : 4/5 LB 1 2 5 HE Date Code Control Code H I G Tab P L J M 3 2 1 O N K Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I J K L M N O P Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB125HE HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HE200214 Issued Date : 2002.09.01 Revised Date : 2004.11.08 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HLB125HE HSMC Product Specification |
Price & Availability of HLB125HE
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |